收藏本站
EMH2408
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
min
Ratings
typ
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS= 2 0V, VGS=0V
VGS=±8V, VDS=0V
20
1
±10
V
μ A
μ A
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
RDS(on)1
VDS=10V, ID=1mA
VDS=10V, ID= 2 A
ID=4A, VGS=4.5V
0.4
2.0
3.4
34
1.3
45
V
S
m Ω
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1A, VGS=2.5V
ID=0.5A, VGS=1.8V
VDS=10V, f=1MHz
See speci ? ed Test Circuit.
VDS=10V, VGS=4.5V, ID=4A
IS=4A, VGS=0V
49
74
345
67
52
9.2
60
30
38
4.7
0.65
1.6
0.8
67
115
1.2
m Ω
m Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
4.5V
0V
VIN
VDD=10V
VIN
D
ID=2A
RL=5 Ω
VOUT
PW=10 μ s
D.C. ≤ 1%
G
EMH2408
P.G
50 Ω
S
Ordering Information
Device
EMH2408-TL-H
Package
EMH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1170-2/7
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
EMH2409-TL-H MOSFET N-CH DUAL 30V 4A EMH8
EMH2411R-TL-H MOSFET N-CH DUAL 30V 5A EMH8
EMH2412-TL-H MOSFET N-CH DUAL 24V 6A EMH8
EMH2604-TL-H MOSFET N/P-CH 20V 4A EMH8
EMH2801-TL-H MOSFET/SBD P-CH EMH8
ENW1-EW07 LAMP INCAND T1.5 NEO WEDGE 14V
ENW1-EW87 LAMP T1-1/2 NEO WEDGE 14V 0.140A
ENW2-EW10/GRA LAMP INCAND T1.5 NEO WEDGE 14V
相关代理商/技术参数
EMH2409 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
EMH2409_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
EMH2409-TL-H 功能描述:MOSFET PCH+NCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
EMH2411R 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
EMH2411R_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
EMH2411R-TL-H 功能描述:MOSFET NCH+NCH 2.5V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
EMH2412 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
EMH2412_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications